Abstract The CZTS thin film fabricated based on Cu-Zn-Sn (CZT) or Cu-Zn-Sn-S precursors have difficulties in making a pinhole-free and flat CZTS thin film. In this paper, Cu2ZnSnS4(CZTS) thin films were fabricated based on oxygen-containing Cu-Zn-Sn precursors. By intentionally introducing O into Cu-Zn-Sn precursors, sudden volume expansion from precursor to CZTS thin films can be avoided and smooth CZTS film surfaces without pinholes were produced. Oxygen-containing Cu-Zn-Sn precursors were prepared by sputtering ZnO, Cu, and Sn targets successfully. MoS2 formation could be suppressed by introducing ZnO as a barrier layer between CZTS absorber and Mo back contact interface during the sulfurizing process under high sulphur pressure. The short circuit current density (Jsc) and open circuit voltage (Voc) of CZTS solar cells could be increased by optimizing the sulfurization temperature. And the best conversion efficiency of CZTS solar cells from oxygen-containing precursors was 4.97 %, with an open circuit voltage of 566 mV, a short circuit current density of 21.44 mA/cm-2 and a fill factor of 41 %.

中文翻译：

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含氧Cu-Zn-Sn前驱体改善Cu2ZnSnS4薄膜性能

摘要 基于Cu-Zn-Sn (CZT) 或Cu-Zn-Sn-S 前驱体制备的CZTS 薄膜在制备无针孔且平坦的CZTS 薄膜方面存在困难。在本文中，基于含氧的 Cu-Zn-Sn 前驱体制备了 Cu2ZnSnS4(CZTS) 薄膜。通过有意将 O 引入 Cu-Zn-Sn 前驱体，可以避免从前驱体到 CZTS 薄膜的突然体积膨胀，并产生没有针孔的光滑 CZTS 薄膜表面。通过溅射ZnO、Cu和Sn靶成功制备了含氧Cu-Zn-Sn前驱体。在高硫压力下的硫化过程中，通过在 CZTS 吸收剂和 Mo 背接触界面之间引入 ZnO 作为阻挡层，可以抑制 MoS2 的形成。通过优化硫化温度可以提高CZTS太阳能电池的短路电流密度（Jsc）和开路电压（Voc）。含氧前驱体的CZTS太阳能电池的最佳转换效率为4.97 %，开路电压为566 mV，短路电流密度为21.44 mA/cm-2，填充因子为41 %。