We investigated the detection limit of carbon in Si for the photoluminescence (PL) method after electron irradiation. The detection limit was obtained from the intensity ratio of the G-line to the free exciton line with the G-line intensity twice as high as the noise level and was estimated at 4נ10¹³cm⁻³ under the measurement condition in accordance with the standard [JIS H0615] for quantification of donor and acceptor impurities in Si at 4.2K. We showed that the limit is extendable down to 2נ10¹³cm⁻³ by optimizing the excitation power and sample temperature.

中文翻译：

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电子照射后光致发光法测定硅中碳浓度的检测限

我们研究了电子辐照后光致发光（PL）方法中Si中碳的检测极限。由G线与自由激子线的强度比得到的检出限，其G线强度是噪声水平的两倍，并且在测量条件下根据标准估计为4 × 10 ¹³ cm ^-3。 [JIS H0615]用于定量测定4.2K下Si中的施主和受主杂质。我们表明，通过优化激发功率和样品温度，该极限可扩展至2 × 10 ¹³ cm ^-3。