In this work, we found that growth defects with terrace pits were formed during the growth of diamond synthesized for a long time using a temperature gradient growth method under high pressure and high temperature conditions. To explain the formation of defects, the temperature field and flow field under the catalyst growth conditions were analysed for the first time using finite element method simulations. The simulation results accurately explain the formation mechanism of growth defects on diamond crystals, with the calculated results showing good agreement with the experimental data. Excitingly, we propose two simple and effective methods for the elimination of the defects by merely adjusting the catalyst thickness and diameter. These methods not only improve the quality of large single crystal diamond, but also help to reduce the cutting cost of commercial diamond.

中文翻译：

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消除高压合成腔中物理场不对称引起的金刚石缺陷的有效方法

在这项工作中，我们发现在高压和高温条件下使用温度梯度生长方法长时间合成的金刚石生长过程中，形成了带有台坑的生长缺陷。为了解释缺陷的形成，首次使用有限元方法模拟分析了催化剂生长条件下的温度场和流场。仿真结果准确地解释了金刚石晶体上生长缺陷的形成机理，计算结果与实验数据吻合良好。令人兴奋的是，我们提出了两种简单有效的方法来消除缺陷，只需调整催化剂的厚度和直径即可。这些方法不仅可以提高大型单晶钻石的质量，