Surface ledges of β-Ga2O3 (100) substrates guide the unidirectional nucleation and growth of transition metal dichalcogenides, achieving centimetre-long, single-crystalline and densely aligned nanoribbons in wafer scale.

中文翻译：

---

靠在窗台上

β-Ga2O3（100）衬底的表面壁突引导过渡金属二卤化物的单向成核和生长，从而在晶圆级实现厘米级长，单晶且密集排列的纳米带。