This study presents a modified version of MIS-HEMT via incorporation of dielectric pocket with a dual metal enabled gate (DP-DMG) architecture to achieve an enhancement in the electrical performance of AlGaN/GaN HEMT. A noteworthy improvement in DC/RF characteristics is observed with DP-DMG HEMT in comparison to conventionally used single metal gated Schottky (SMG) HEMT including gate leakage. Moreover, DP-DMG is further studied with different dielectrics to tune its electrical performance along with the depth of the dielectric pocket. The maximum rise in drain current and transconductance achieved with different dielectric DP-DMG HEMT is 13% and 13.5%, respectively. Apart from this, a significant positive shift of ∼0.6 V is recorded with HfO2 with a dielectric thickness of 5 nm. RF simulations showed significant improvement (∼2×) in the cut-off frequency of DP-DMG HEMT in comparison to SMG HEMT.

本研究通过将电介质口袋与双金属启用栅极 (DP-DMG) 架构相结合，提出了 MIS-HEMT 的修改版本，以增强 AlGaN/GaN HEMT 的电气性能。与传统使用的单金属门控肖特基 (SMG) HEMT 相比，DP-DMG HEMT 的 DC/RF 特性有显着改善，包括栅极泄漏。此外，DP-DMG 进一步研究了不同的电介质，以调整其电性能以及电介质袋的深度。使用不同电介质 DP-DMG HEMT 实现的漏极电流和跨导的最大上升分别为 13% 和 13.5%。除此之外，使用介电层厚度为 5 nm 的 HfO2 记录到 ∼0.6 V 的显着正偏移。