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Phase‐Change Logic via Thermal Cross‐Talk for Computation in Memory
Physica Status Solidi-Rapid Research Letters ( IF 2.8 ) Pub Date : 2020-11-18 , DOI: 10.1002/pssr.202000422
Nadim Kanan 1 , Raihan Sayeed Khan 1 , Zachary Woods 1 , Helena Silva 1 , Ali Gokirmak 1
Affiliation  

Herein, logic function implementations are computationally demonstrated using lateral and vertical multicontact phase‐change devices integrated with complementary metal–oxide–semiconductor (CMOS) circuitry, which use thermal cross‐talk as a coupling mechanism to implement logic functions at smaller CMOS footprints. Thermal cross‐talk during the write operations is utilized to recrystallize the previously amorphized regions to achieve toggle operations. Amorphized regions formed between different pairs of write contacts are utilized to isolate read contacts. Typical expected reduction in CMOS footprint is ≈50% using the described approach for toggle‐multiplexing, JK‐multiplexing, and 2 × 2 routing. The switching speeds of the phase‐change devices are in the order of nanoseconds and are inherently nonvolatile. An electrothermal modeling framework with dynamic materials models is used to capture the device dynamics, and current and voltage requirements.

中文翻译:

通过热交叉对话进行相变逻辑以在存储器中进行计算

本文中,通过使用与互补金属氧化物半导体(CMOS)电路集成的横向和垂直多触点相变器件在计算上演示了逻辑功能实现,该器件使用热串扰作为耦合机制在较小的CMOS占位面积上实现逻辑功能。写入操作期间的热串扰用于使先前非晶化的区域重结晶以实现切换操作。在不同对的写触点之间形成的非晶化区域被用来隔离读触点。使用上述方法进行双工多路复用,JK多路复用和2×2路由时,典型的CMOS覆盖面积预期可减少约50%。相变设备的开关速度约为纳秒级,本质上是非易失性的。
更新日期:2020-11-18
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