Chemical Physics Letters ( IF 2.8 ) Pub Date : 2020-11-18 , DOI: 10.1016/j.cplett.2020.138162 Arun Kumar , Manjeet Kumar , Vishwa Bhatt , Deasung Kim , Samrat Mukherjee , Ju-Hyung Yun , Ravi Kant Choubey
The improvement in UV photoconductor device performance has been significantly realized by comprising the ZnS based nano/micro-structures. In the present work, a simple one-step hydrothermal technique has been implied to synthesize the ZnS based microspheres, and it has been utilized for the UV photoconductor device applications. FESEM analysis revealed that as-synthesized ZnS possesses the shape of a microsphere with nanosheets on its surface. The size of the microspheres and the thickness of the nanosheets is found to be ∼1.5 (±0.3) µm and ∼22 (±3) nm, respectively. The current-voltage (I-V) and current-time (I-T) measurements have been carried out under different UV light exposures, and various photoconductor performance parameters have been investigated systematically. The sensitivity and on/off ratio are estimated to be 0.21-0.35 and 1.21-1.35, respectively. However, responsivity and detectivity are found to be 2.74×10-4- 8.94×10-5 A/W and 2.02×109 - 6.51×108 Jones, respectively. Improved responsivity and detectivity along with the faster rise/fall time (0.153/0.206 sec) are associated to higher active surface area and porosity that provided a higher number of active sites for charge carrier generations under UV light exposure.
中文翻译:
ZnS微球基光电导体,用于紫外光感测应用
通过包含基于ZnS的纳米/微结构,已大大实现了UV光电导体性能的提高。在目前的工作中,已经暗示了一种简单的一步水热技术来合成基于ZnS的微球,并且已将其用于UV光电导体应用。FESEM分析表明,合成后的ZnS具有表面呈纳米片状的微球形状。发现微球的尺寸和纳米片的厚度分别为〜1.5(±0.3)μm和〜22(±3)nm。在不同的紫外线照射下进行了电流-电压(IV)和电流-时间(IT)测量,并且系统地研究了各种光电导体性能参数。灵敏度和开/关比估计为0.21-0.35和1.21-1。35。然而,发现响应度和探测度为2.74×10-4 - 8.94×10 -5 A / W和2.02×10 9 - 6.51×10 8琼斯,分别。更高的响应度和探测率以及更快的上升/下降时间(0.153 / 0.206秒)与更高的活性表面积和孔隙率相关,从而为暴露于紫外线下的电荷载流子提供了更多的活性位点。