Abstract

The previously proposed technique of microwave volt–impedance spectroscopy of semiconductors has been experimentally verified. The technique allows one to determine the local values of electrical parameters of a semiconductor. The investigations have been carried out on a homogeneous single-crystal GaAs wafer with a system of concentric antennas formed on the top of it. The resolution is determined by the antenna central disk diameter, which has been 12, 27, and 57 μm. A dc bias voltage of 0 V ≤ U ≤ 5 V has been applied between antenna contact pads. The complex Z(f, U) impedance spectrum of each antenna has been measured on a Cascade Microtech probe station in the frequency range of f = 0.1–10 GHz. The electrical characteristics of the semiconductor have been determined from the Z(f, U) spectra by solving the inverse problem. The n-type of the semiconductor has been established, and the contact potential difference at the interface with a metal has been determined. The local values of electron density, mobility and electrical conductivity have been found have been found. The four-point probe Hall effect measurements of the surface-averaged values of the same parameters have shown good agreement of the results for the investigated homogeneous wafer.

中文翻译：

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半导体的微波伏安阻抗谱

摘要

先前提出的半导体微波阻抗谱技术已通过实验验证。该技术允许确定半导体的电参数的局部值。研究是在均质单晶GaAs晶圆上进行的，该晶圆上形成有同心天线系统。分辨率由天线中心盘直径确定，该直径为12、27和57μm。的0 V≤的DC偏置电压ü ≤5 V已天线接触垫之间施加。每个天线的复数Z（f，U）阻抗谱已在Cascade Microtech探针台上在f的频率范围内进行了测量。= 0.1–10 GHz。通过解决反问题，已从Z（f，U）光谱确定了半导体的电特性。所述Ñ半导体型已经建立，并在与金属的界面处的接触电势差已被确定。已经发现了电子密度，迁移率和电导率的局部值。相同参数的表面平均值的四点探针霍尔效应测量结果与所研究的均质晶圆的结果显示出良好的一致性。