Chinese Physics B ( IF 1.7 ) Pub Date : 2020-11-17 , DOI: 10.1088/1674-1056/abbbf2 Jia Lu 1 , Yu-Lin Gan 1 , Yun-Lin Lei 2 , Lei Yan 1 , Hong Ding 1, 3, 4
EuS is one of typical ferromagnetic semiconductor using as spin filter in spintronic devices, and the doped one could be a good spin injector. Herein, we fabricate a spin-functional tunnel junction by epitaxially growing the ferromagnetic EuS film on Nb-doped SrTiO3. The improvement of Curie temperature up to 35 K is associated with indirect exchange through additional charge carriers at the interface of EuS/Nb:STO junction. Its magnetic field controlled current–voltage curves indicate the large magnetoresistance (MR) effect in EuS barriers as a highly spin-polarized injector. The negative MR is up to 60% in 10-nm EuS/Nb:STO at 4 T and 30 K. The MR is enhanced with increasing thickness of EuS barrier. The large negative MR effect over a wide temperature range makes this junction into a potential candidate for spintronic devices.