We proposed a HF/HCl/H₂O system with manganese dioxide (MnO₂) particle as the oxidant to obtain high-performance texturization on multi-crystalline silicon (mc-Si) wafers. The texturization obtained by the HF/HCl/H₂O/MnO₂ system had a more uniform distribution and a lower surface reflectance than that obtained by the conventional HF/HNO₃/H₂O system, especially on the surface of diamond wire sawn (DWS) mc-Si wafers. The etching mechanism was revealed by studying the effects of the usage variation of HF, HCl and MnO₂. The etching only occurs at the locations where MnO₂ particles are deposited on the silicon surface and will self-terminate with the full consumption of MnO₂. Thus the texture morphology can be easily controlled by adjusting the usage of MnO₂ particles with sufficient HCl and HF. Furthermore, such method is environmentally friendly not to use HNO₃.

我们提出了一种以二氧化锰 (MnO ₂ ) 颗粒为氧化剂的 HF/HCl/H ₂ O 系统，以在多晶硅 (mc-Si) 晶片上获得高性能纹理化。HF/HCl/H ₂ O/MnO ₂体系获得的织构比传统的HF/HNO ₃ /H ₂ O体系获得的组织分布更均匀，表面反射率更低，尤其是在金刚石线锯表面(DWS) mc-Si 晶片。通过研究HF、HCl和MnO ₂使用变化的影响，揭示了蚀刻机制。蚀刻仅发生在 MnO ₂颗粒沉积在硅表面，并会随着 MnO ₂的完全消耗而自行终止。因此，通过使用足够的 HCl 和 HF调整 MnO ₂颗粒的使用，可以容易地控制织构形态。此外，这种方法不使用HNO ₃是环境友好的。