The reverse leakage current under high reverse voltage of a Ni/β-Ga ₂ O ₃ Schottky barrier diode (SBD) is numerically modelled and compared to measurements. universal Schottky tunnelling, thermionic emission and image-force lowering were taken into account. Furthermore, when type conversion under high reverse voltage has occurred at the top interface between Ni and β-Ga ₂ O ₃ and the SBD behaved as P–i–N diode, band to band tunnelling is proposed in association with the usually used Selberherr’s Impact ionization to model avalanche breakdown. The obtained breakdown voltage and specific on-resistance value are 434 V and 2.13 mΩcm², respectively, fairly close to measurement values of 440 V and 2.79 mΩcm². Optimization is performed based on the insertion of an intrinsic layer between Ni and the β-Ga ₂ O ₃ drift layer. It was found that 0.4 μm gave better Baliga’s figure of merit of 9.4810⁷ Wcm⁻² with breakdown voltage and specific on-resistance of 465 V and 2.28 mΩcm², respectively. Finally, a surface edge termination design based on TiO₂ insulator plate is adopted and the best obtained breakdown voltage, Baliga’s figure of merit and specific on-resistance were 1466 V, 1.98 10⁹ Wcm⁻² and 1.98 mΩcm² respectively.

对Ni / β - Ga ₂ O ₃肖特基势垒二极管（SBD）的高反向电压下的反向泄漏电流进行了数值建模，并将其与测量结果进行了比较。考虑了通用肖特基隧穿，热电子发射和图像力降低。此外，当在Ni和β - Ga ₂ O ₃的顶部界面处发生高反向电压下的类型转换并且SBD表现为P–i–N二极管时，建议结合通常使用的Selberherr's Impact进行带间隧穿电离以模拟雪崩击穿。将所获得的击穿电压和导通电阻值是434 V和2.13mΩcm ²分别相当接近440 V和2.79mΩcm的测量值²。基于在Ni和β - Ga ₂ O ₃漂移层之间插入本征层来执行优化。结果发现，0.4 μ米给出了更好的9.4810的优点的Baliga的图⁷ WCM ^-2与击穿电压和导通电阻465 V和2.28mΩcm的²分别。最后，采用基于TiO ₂绝缘板的表面边缘端接设计，获得的最佳击穿电压，Baliga的品质因数和比导通电阻为1466 V，1.98 10 ⁹ Wcm ^-2和1.98mΩcm ²分别。