Abstract Selective area epitaxial (SAE) growth of III-V materials and devices by metalorganic chemical vapor deposition is selectively reviewed to illustrate the concepts employed in this technology and its most relevant applications. Special focus on the use of SAE use for photonic integration, heterogeneous integration of materials relevant to photonic integration, and nanostructure integration is made. Throughout, the pioneering work led by Professor James J. Coleman is used to illustrate the value of using selective growth for various applications.

中文翻译：

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通过金属有机化学气相沉积进行选择性区域外延——一种用于光子和新型纳米结构集成的工具

摘要 选择性地回顾了通过金属有机化学气相沉积对 III-V 族材料和器件进行的选择性区域外延 (SAE) 生长，以说明该技术中采用的概念及其最相关的应用。特别关注 SAE 用于光子集成、与光子集成相关的材料的异质集成和纳米结构集成。自始至终，James J. Coleman 教授领导的开创性工作都被用来说明在各种应用中使用选择性生长的价值。