Anomalies due to random displacement defect is investigated in a 5 nm nanosheet gate-all-around field effect transistor (NS-FET). Terrestrial cosmic radiation is known to cause silicon displacement in random location. In this work, the random displacement anomaly (RDA) is investigated in NS-FET with the aid of technology computer aided design (TCAD). The fluctuation due to RDA is considered as a variable and its impact on the electrical characteristics is investigated for various width and thickness values of the NS-FET. The contribution to the RDA in individual NS layers is studied. The worst degradation rate of drain current is almost 20% while RDA is located at center of top layer in NS-FET.

中文翻译：

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纳米片场效应晶体管位移缺陷的影响

在 5 nm 纳米片环栅场效应晶体管 (NS-FET) 中研究了由于随机位移缺陷引起的异常。众所周知，地球宇宙辐射会导致硅在随机位置发生位移。在这项工作中，借助计算机辅助设计 (TCAD) 技术在 NS-FET 中研究了随机位移异常 (RDA)。由于 RDA 引起的波动被认为是一个变量，并针对 NS-FET 的各种宽度和厚度值研究了其对电气特性的影响。研究了各个 NS 层对 RDA 的贡献。当 RDA 位于 NS-FET 的顶层中心时，漏极电流的最坏退化率几乎为 20%。