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Exploration of the bond angle and charge carrier density by rare-earth doping inSr2IrO4
Physical Review Materials ( IF 3.4 ) Pub Date : 2020-11-16 , DOI: 10.1103/physrevmaterials.4.115001
Hui Huang , Ping Ji , Yu Xie , Hui Han , Binghui Ge

Doping at the Sr site in Sr2IrO4 is predicted to be a possible route to high-temperature superconductivity, which has not yet been experimentally achieved. We have made a comprehensive investigation on the interplay among the Ir-O-Ir bond angle, carrier density, and magnetic and transport properties of rare-earth-doped Sr2IrO4 by choosing Pr and Ce as the dopants. We find that compared with Pr doping, Ce doping introduces more effective charge carriers into the Sr2IrO4 matrix, leading to a more rapid suppression of its magnetic ordering. A metallic-like behavior has been observed in heavily Ce-doped samples. The evolutions of magnetic and transport behaviors are found to be less relevant to the distorted Ir-O-Ir bond angle. The present results suggest that the charge carrier density could be a crucial factor in determining the physical properties of rare-earth-doped Sr2IrO4 compounds.

中文翻译:

Sr2IrO4中稀土掺杂对键角和载流子密度的影响

在Sr现场掺杂 r2氧化铁4预计这是通向高温超导性的一种可能途径,目前尚未通过实验实现。我们已经对Ir-O-Ir键角,载流子密度以及掺杂稀土元素的磁和输运性质之间的相互作用进行了全面研究r2氧化铁4通过选择Pr和Ce作为掺杂剂。我们发现,与Pr掺杂相比,Ce掺杂将更有效的载流子引入了r2氧化铁4矩阵,从而更快地抑制其磁序。在重掺Ce的样品中观察到了类似金属的行为。发现磁性和传输行为的演变与扭曲的Ir-O-Ir键角无关。目前的结果表明,载流子密度可能是决定稀土掺杂物理性质的关键因素。r2氧化铁4 化合物。
更新日期:2020-11-16
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