Poly(3-hexyl-thiophene-2,5-diyl) (P3HT) is one of the most commonly used materials in organic electronics, yet it is considered to be rather unattractive for organic field-effect transistors (OFETs) due to its tendency to oxidize under aerobic conditions. Strong p-doping of P3HT by oxygen causes high off-currents in such devices opposing the desired high on/off-ratios. Herein, a new application-oriented method involving the recently developed immobilizable organic n-dopant 2-(2-((4-azidobenzyl)oxy)phenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazol (o-AzBnO-DMBI) is presented allowing to process and operate P3HT OFETs in air. The n-dopants compensate oxygen doping by trapping generated free holes, thereby rediminishing OFET off-currents by approximately two orders of magnitude. At the same time, field-effect mobilities remain high in the order of up to 0.19 cm² V⁻¹ s⁻¹. Due to the covalent attachment of the dopants to the host matrix after photochemical activation, a drift of the otherwise mobile ions within the device is prevented even at high operating voltages and, thus, hysteresis in the corresponding transfer characteristics is kept low. In this manner, the air instability of P3HT OFETs is successfully resolved paving an auspicious way toward OFET mass production. As the immobilization process employed here is nonspecific with respect to the host material, this strategy is transferable to other p-type semiconductors.

中文翻译：

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利用固定化 n 掺杂剂补偿 p 型有机场效应晶体管中的氧掺杂

Poly(3-hexyl-thiophene-2,5-diyl) (P3HT) 是有机电子学中最常用的材料之一，但由于其倾向，它被认为对有机场效应晶体管 (OFET) 没有吸引力在有氧条件下氧化。氧对 P3HT 的强 p 型掺杂会导致此类器件中的高截止电流与所需的高开/关比相反。在此，一种新的面向应用的方法涉及最近开发的可固定有机 n-掺杂剂 2-(2-((4-azidobenzyl)oxy)phenyl)-1,3-dimethyl-2,3-dihydro-1 H - benzoimidazol ( ○-AzBnO-DMBI) 允许在空气中处理和操作 P3HT OFET。n 型掺杂剂通过捕获产生的自由空穴来补偿氧掺杂，从而将 OFET 截止电流减少大约两个数量级。同时，场效应迁移率仍然很高，高达 0.19 cm ²  V ^-1  s ^-1. 由于在光化学活化后掺杂剂与主体基质共价连接，即使在高工作电压下也可以防止器件内其他可移动离子的漂移，因此相应的转移特性的滞后保持在较低水平。通过这种方式，成功解决了 P3HT OFET 的空气不稳定性问题，为 OFET 大规模生产铺平了道路。由于此处采用的固定过程对于主体材料是非特异性的，因此该策略可转移到其他 p 型半导体。