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A Decrease in the Exchange Bias Caused by an Increase in the Effective Thickness of the Copper Layer in the NiFe/Cu/IrMn Heterostructures
Physics of the Solid State ( IF 0.6 ) Pub Date : 2020-11-16 , DOI: 10.1134/s1063783420110207
R. B. Morgunov , M. V. Bakhmet’ev , A. D. Talantsev

Abstract

In a series of NiFe/Cu/IrMn structures with a variable effective thickness of the nonmagnetic copper interlayer (up to its absence in the NiFe/IrMn sample), we observed a decrease in the exchange bias and coercive force with an increase in the effective thickness of the copper layer. The coalescence of copper islands when the effective thickness of the copper layer reaches 1 nm changes the contact exchange interaction between the ferromagnet and antiferromagnet in NiFe–IrMn to indirect exchange interaction through the conduction electrons of the copper layer in NiFe–Cu–IrMn. The structural quality of single-crystal ferromagnetic and antiferromagnetic layers does not change, and the magnetization reversal occurs without the participation of domains in the temperature range of 2–300 K. Simulation of the deposition dynamics demonstrates the island structure of the film at the initial stages up to an effective thickness of 1 nm.



中文翻译:

NiFe / Cu / IrMn异质结构中铜层有效厚度增加所引起的交换偏差的减少

摘要

在一系列具有非磁性铜中间层有效厚度可变(直到在NiFe / IrMn样品中不存在)的NiFe / Cu / IrMn结构中,我们观察到交换偏压和矫顽力的降低,随着有效磁性的增加铜层的厚度。当铜层的有效厚度达到1 nm时,铜岛的合并会改变NiFe–IrMn中铁磁体和反铁磁体之间的接触交换相互作用,从而通过NiFe–Cu–IrMn中铜层的导电电子间接交换相互作用。单晶铁磁层和反铁磁层的结构质量没有改变,在没有磁畴参与的温度范围为2–300 K的情况下发生了磁化反转。

更新日期:2020-11-16
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