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Two stage epitaxial growth of wafer-size multilayer h-BN by metal-organic vapor phase epitaxy – a homoepitaxial approach
2D Materials ( IF 5.5 ) Pub Date : 2020-11-14 , DOI: 10.1088/2053-1583/abbd1f
Aleksandra Krystyna Dąbrowska , Mateusz Tokarczyk , Grzegorz Kowalski , Johannes Binder , Rafał Bożek , Jolanta Borysiuk , Roman Stępniewski , Andrzej Wysmołek

Van der Waals heterostructures based on hexagonal boron nitride (h-BN) and other 2D materials may pave the way for future electronic applications. Wafer-scale uniform h-BN substrates are a must in this respect. In this work, we demonstrate a new growth regime which allows for scalable, uniform synthesis of high quality h-BN layers on 2’ sapphire substrates. We propose a new approach to metal organic vapour phase epitaxy of h-BN layers on sapphire substrates. The growth scheme involves an intermediary BN buffer layer grown under self-limiting conditions (continuous flow) followed by the final growth of h-BN with flow modulated epitaxy in one growth run. This scheme can be regarded as homoepitaxial growth of h-BN on a self-limiting buffer. Our studies show that the buffer layer allows to control the nucleation at the crucial early stages of BN layer growth, suppressing unwanted out-of-plane growth. It can also be used to control the density of point-like defects responsible for unwanted luminescence from the h-BN layer. Moreover, our results show that the buffer effectively suppresses the creation of amorphous BN at the sapphire/h-BN interface.



中文翻译:

通过金属有机气相外延法对晶圆尺寸的多层h-BN进行两阶段外延生长-同质外延法

基于六方氮化硼(h-BN)和其他2D材料的Van der Waals异质结构可能为未来的电子应用铺平道路。在这方面,必须具有晶圆级均匀的h-BN衬底。在这项工作中,我们展示了一种新的生长机制,该机制允许在2'蓝宝石衬底上可扩展,均匀地合成高质量的h-BN层。我们提出了一种新的方法来对蓝宝石衬底上的h-BN层进行金属有机气相外延。该生长方案涉及在自限条件(连续流动)下生长的中间BN缓冲层,然后在一个生长运行中最终对h-BN进行最终生长,并进行流量调节外延。该方案可以看作是h-BN在自限缓冲液上的同质外延生长。我们的研究表明,缓冲层可在BN层生长的关键早期阶段控制形核,从而抑制有害的面外生长。它也可以用来控制导致h-BN层产生有害发光的点状缺陷的密度。而且,我们的结果表明,该缓冲器有效地抑制了在蓝宝石/ h-BN界面处非晶BN的产生。

更新日期:2020-11-14
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