The strong dispersion, ultra-thin form-factor and robustness to degradation make metasurfaces attractive for color filter applications. In particular, transmission-mode filters using silicon could potentially replace conventional color filter arrays in backside-illuminated CMOS image sensors and enable novel multispectral image sensors. We report a robust inverse-design methodology using polygon-shaped, particle and void, meta-atoms. We predict that silicon metasurface transmission-mode primary color (RGB) filters designed with this approach exhibit enhanced color gamut, color purity and intra-pixel color uniformity in comparison to previous reports. The proposed robust inverse design procedure employs multi-island Differential Evolution whose fitness evaluation step uses a statistical model of nanofabrication imperfections. The statistical model can closely recreate the shape variations observed in micrographs of silicon metasurfaces fabricated using electron-beam lithography and is useful in guiding the optimization process towards robust designs.

中文翻译：

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全介电超表面透射模式滤色器的稳健逆向设计

强分散性、超薄外形和抗降解能力使超表面对滤色器应用具有吸引力。特别是，使用硅的透射模式滤光器有可能取代背照式 CMOS 图像传感器中的传统滤色器阵列，并实现新型多光谱图像传感器。我们报告了一种使用多边形、粒子和空隙、元原子的强大逆向设计方法。我们预测，与之前的报告相比，采用这种方法设计的硅超表面透射模式原色 (RGB) 滤光片表现出增强的色域、色纯度和像素内颜色均匀性。提出的稳健逆向设计程序采用多岛差分进化，其适应度评估步骤使用纳米加工缺陷的统计模型。