A method for direct growth of graphene nanowalls (GNWs) on an insulating substrate by plasma enhanced chemical vapor deposition (PECVD) is reported. The effects of growth temperature, plasma power, carbon source concentration, gas ratio and growth time on the quality of GNWs are systematically studied. The Raman spectrum shows that the obtained GNWs have a relatively high quality with a D to G peak ratio (ID/IG) of 0.42. Based on the optimization of the quality of GNWs, a field-effect transistor (FET) photodetector is prepared for the first time, and its photo-response mechanism is analyzed. The responsivity of the photodetector is 160 mA/W at 792 nm and 55 mA/W at 1550 nm. The results reveal that the GNWs are promising for high performance photodetectors.

中文翻译：

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通过等离子体增强化学气相沉积在电介质表面直接生长高质量石墨烯纳米壁用于光检测

报道了一种通过等离子体增强化学气相沉积 (PECVD) 在绝缘衬底上直接生长石墨烯纳米壁 (GNW) 的方法。系统研究了生长温度、等离子体功率、碳源浓度、气体比和生长时间对GNWs质量的影响。拉曼光谱表明获得的 GNW 具有相对较高的质量，D 与 G 峰值比（ID / IG）为 0.42。在优化GNWs质量的基础上，首次制备了场效应晶体管（FET）光电探测器，并分析了其光响应机制。光电探测器的响应度在 792 nm 处为 160 mA/W，在 1550 nm 处为 55 mA/W。结果表明，GNWs 有望用于高性能光电探测器。