21st-century studies in the field of epitaxy brought observable progress in a field of heterogeneous integration of III-V materials onto silicon photonic systems. BGaAs/GaP quantum wells (QWs) are a new material system, which can be grown on GaP/Si templates and thereby can be integrated with a Si platform. This work presents calculations of the material optical gain spectra for the QWs modified by an incorporation of group III and V elements, in both the QWs region and its barriers. The gain spectra are calculated based on the 8-band k · p model and Fermi’s Golden Rule. Incorporations of indium and phosphorus are analyzed for the thin film of the QWs, and boron, aluminum, indium, and arsenic for its barriers. Since an energy of gain peak in the BGaAs/GaP QWs can be tuned within a range of 690-730 nm and the positive optical gain is presented for the QWs with these modifications, this system is promising for further development of red-light lasers integrated with Si.

中文翻译：

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BGaAs/GaP 量子阱对 III 族和 V 族原子混合物的光学增益敏感性

21 世纪外延领域的研究在 III-V 族材料异质集成到硅光子系统领域取得了显着进展。BGaAs/GaP 量子阱 (QW) 是一种新材料系统，可以在 GaP/Si 模板上生长，从而可以与 Si 平台集成。这项工作介绍了通过在 QW 区域及其势垒中掺入 III 族和 V 族元素而修改的 QW 的材料光学增益光谱的计算。增益谱是根据 8 波段 k·p 模型和费米黄金法则计算的。分析了 QW 薄膜中铟和磷的掺入，以及其势垒中硼、铝、铟和砷的掺入。