Cross‐sectional submicronic Laue diffraction has been successfully applied to HgCdTe/CdZnTe heterostructures to provide accurate strain profiles from substrate to surface. Combined with chemical‐sensitive techniques, this approach allows correlation of lattice‐mismatch, interface compositional gradient and strain while isolating specific layer contributions which would otherwise be averaged using conventional X‐ray diffraction. The submicronic spatial resolution allowed by the synchrotron white beam size is particularly suited to complex infrared detector designed structures such as dual‐color detectors. The extreme strain resolution of 10⁻⁵ required for the very low lattice‐mismatch system HgCdTe/CdZnTe is demonstrated.

中文翻译：

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亚微米Laue衍射可确定非常紧密匹配的HgCdTe / CdZnTe异质结构的深度应变，分辨率为10-5

截面亚微米Laue衍射已成功应用于HgCdTe / CdZnTe异质结构，以提供从基底到表面的准确应变曲线。结合化学敏感技术，该方法可实现晶格不匹配，界面成分梯度和应变的相关性，同时隔离特定层的贡献，而使用传统的X射线衍射则可将其平均化。同步加速器白光束尺寸允许的亚微米空间分辨率特别适用于复杂的红外探测器设计结构，例如双色探测器。展示了极低晶格失配系统HgCdTe / CdZnTe所需的10 ^-5的极限应变分辨率。