In this work, un-doped and Ni-doped titanium dioxide nanorod (TiO₂ NR) arrays were synthesized by using a hydrothermal method in a Teflon-lined autoclave, on a fluorine tin oxide (FTO) substrate, at different Ni content (X_Ni = 0, 0.025, 0.05, 0.075, and 0.1). The grown nanorod array samples were studied by XRD, FESEM, DC conductivity, Hall effect measurements, ultraviolet-visible (UV-Vis) spectroscopy, and vibrating-sample magnetometer (VSM) measurements. Pure rutile phase with preferred orientation along (002) was noticed, indicating that the vertical growth of nanorods for the un-doped sample converts to the (101) direction with increasing doping content. The sharp (002) peaks compared with the broad behavior for other peaks indicate the longitudinal growth along this direction. The lattice constant (a), for tetragonal structure, increased with increasing Ni content, while small increment showed along the (c) direction. Uniformly distributed nanorod arrays with 2000-nm length and 200-nm diameter for the un-doped sample. The nanorod length decreases and their diameters increase with increasing Ni doping content. All the prepared samples showed that they behave like n-type semiconductors with a high carrier concentration and this can be attributed to the present of oxygen vacancies. DC conductivity increases due to increasing carrier concentration, while the charge carriers’ mobility decreases with increasing doping content from 0 to 0.1. Increasing Ni content enhances the TiO₂ NR magnetic properties, where the residual magnetization increased from 0.0001 to 0.0058 emu/g, while the saturation magnetization increased from 0.0304 to 0.2652 emu/g with increasing Ni content from 0 to 0.1.

在这项工作中，通过水热法在衬有特氟隆的高压釜中，在氟锡氧化物（FTO）衬底上，以不同的Ni含量合成了未掺杂和Ni掺杂的二氧化钛纳米棒（TiO ₂ NR）阵列。_你 = 0、0.025、0.05、0.075和0.1）。通过XRD，FESEM，DC电导率，霍尔效应测量，紫外可见（UV-Vis）光谱和振动样品磁力计（VSM）测量研究了生长的纳米棒阵列样品。注意到沿（002）方向具有优选取向的纯金红石相，表明随着掺杂含量的增加，未掺杂样品的纳米棒的垂直生长转换为（101）方向。尖峰（002）的峰与宽广的峰相比，其他峰表明沿该方向的纵向扩展。对于四方结构，晶格常数（a）随着Ni含量的增加而增加，而沿（c）方向则显示出很小的增量。未掺杂样品的均匀分布纳米棒阵列，其长度为2000 nm，直径为200 nm。随Ni掺杂含量的增加，纳米棒的长度减小，直径增大。所有制备的样品均显示出它们的行为类似于具有高载流子浓度的n型半导体，这可以归因于氧空位的存在。直流电导率由于载流子浓度的增加而增加，而电荷载流子的迁移率随掺杂含量从0增加到0.1而降低。增加镍含量可增强TiO₂ NR磁性，其中残余磁化强度从0.0001增至0.0058 emu / g，而饱和磁化强度从0.0304增至0.2652 emu / g，其中Ni含量从0增加至0.1。