We report the simulation outcomes of a highly efficient CuI/n-Si heterojunction solar cell (HJSC) by SCAPS-1D simulator using the parameters obtained from spin-coated CuI thin film characterizations. The influence of thickness and doping concentration of Si substrate as well as CuI hole transport layer (HTL) on the photovoltaic (PV) parameters and built-in potential has been explored. The optimum values of the solar cell parameters are presented to attain the best result. The highest power conversion efficiency (PCE) of 22.62% with J _SC of 37.25 mA cm⁻², V _OC of 0.716 V and FF of 84.69% has been achieved with a 200 μm thick Si substrate and 50 nm thick CuI thin film, respectively. Finally, the resistance dependent PV performance has been investigated for the solar cell. These findings indicate that highly efficient CuI/n-Si HJSC can be designed and this can be a potential candidate compared to the organic/Si HJSC counterpart.

我们通过使用旋涂CuI薄膜表征获得的参数，通过SCAPS-1D模拟器报告了高效CuI / n-Si异质结太阳能电池（HJSC）的模拟结果。研究了硅衬底的厚度和掺杂浓度以及CuI空穴传输层（HTL）对光电（PV）参数和内建电势的影响。提出了太阳能电池参数的最佳值以获得最佳结果。的22.62％的最高能量转换效率（PCE）与Ĵ _SC的37.25毫安厘米^-2，V _OC 0.716的V和84.69％FF已经实现与200 μ 硅基板厚度分别为50μm和50nm的CuI薄膜。最后，对太阳能电池的电阻依赖性PV性能进行了研究。这些发现表明，可以设计高效的CuI / n-Si HJSC，与有机/ Si HJSC对应物相比，它可以成为潜在的候选者。