We formed SiC/SiO₂ structures by various procedures that excluded an oxidation process. We found that a SiC/SiO₂ interface with a low interface state density near the conduction band edge of SiC (D _it∼4נ10¹⁰cm⁻²eV⁻¹ at E _c−0.2eV) is obtained for a fabrication process consisting of H₂ etching of the SiC surface, SiO₂ deposition, and high-temperature N₂ annealing. D _it is rather high without H₂ etching, indicating that etching before SiO₂ deposition plays a significant role in reducing D _it. The key to obtaining low D _it may be the removal of oxidation-induced defects near the SiC surface.

中文翻译：

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在 SiO2 沉积和高温 N2 退火之前通过排除氧化工艺与 H2 蚀刻形成高质量的 SiC(0001)/SiO2 结构

我们通过排除氧化过程的各种程序形成了SiC/SiO _{2结构。我们}发现_，对于由_H _ ^_ _ ^_ _ ^_ _ _ _ ₂ SiC表面的刻蚀、SiO ₂沉积和高温N ₂退火。D_{在没有 H 2}蚀刻的情况下相当高，表明在 SiO _{2蚀刻之前} 沉积对降低D _it起重要作用。获得低D _它的关键可能是去除 SiC 表面附近的氧化诱导缺陷。