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Solvothermal decoration of Cu3SnS4 on reduced graphene oxide for enhanced electrocatalytic hydrogen evolution reaction
Environmental Progress & Sustainable Energy ( IF 2.8 ) Pub Date : 2020-11-13 , DOI: 10.1002/ep.13558
Varsha Raj Govindaraju 1 , Muralikirshna Sreeramareddygari 2 , Nagaraju Doddahalli Hanumantharayudu 3, 4 , Samrat Devaramani 5 , Ramakrishnappa Thippeswamy 1 , Werasak Surareungchai 2, 6
Affiliation  

Metal sulphides combined with graphene/reduced graphene oxide (rGO) represent a unique class of materials for hydrogen generation either through electrocatalytic or photo(electro) catalytic methods. Herein, we report a solvothermal synthesis of Cu3SnS4 decorated rGO resulting in a highly active electrocatalyst for hydrogen evolution reaction (HER) compared to its native Cu3SnS4. The Cu3SnS4‐rGO exhibited very low overpotential of 190 mV versus reversible hydrogen electrode (RHE), whereas Cu3SnS4 requires 250 mV versus RHE at a current density of 10 mA/cm2. Tafel slope of Cu3SnS4‐rGO and Cu3SnS4 is about 64 and 76 mV/dec, respectively. This suggests that Cu3SnS4‐rGO is a better electrocatalyst when compared to Cu3SnS4 and follows mixed Volmer and Heyrovsky mechanism for HER.

中文翻译:

还原氧化石墨烯上的Cu3SnS4溶剂热修饰,用于增强电催化制氢反应

金属硫化物与石墨烯/氧化石墨烯(rGO)的结合代表了一类独特的用于通过电催化或光(电)催化方法产生氢的材料。在此,我们报告了溶剂热合成Cu 3 SnS 4修饰的rGO的结果,与其天然的Cu 3 SnS 4相比,产生了用于氢释放反应(HER)的高活性电催化剂。与可逆氢电极(RHE)相比,Cu 3 SnS 4 -rGO的超电势仅为190 mV,而在10 mA / cm 2的电流密度下,Cu 3 SnS 4相对于RHE则需要250 mV 。Cu 3 SnS的塔菲尔斜率4 -rGO和Cu 3 SnS 4分别约为64和76 mV / dec。这表明铜3的SnS 4与Cu相比时-rGO是较好的电催化剂3周的SnS 4和如下混合Volmer方程和海洛夫斯基机制HER。
更新日期:2020-11-13
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