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Tuning Electronic Structure of 2D In2S3 via P Doping and Size Controlling Toward Efficient Photoelectrochemical Water Oxidation
Solar RRL ( IF 7.9 ) Pub Date : 2020-11-12 , DOI: 10.1002/solr.202000618
Yuli Xiong 1 , Lin Yang 1 , Yan Zhu 1 , Qingxin Lai 2 , Ping Li 2 , Peng Xiao 1 , Guozhong Cao 3
Affiliation  

Two‐dimensional (2D) lamellar materials possess the advantages of strong light–matter interactions and tunable band structure, rendering possible high conversion efficiency of solar to fuel. Herein, the controlled fabrication of small‐sized P doped 2D In2S3 arrays (P‐In2S3) via preseeding method is demonstrated, which is a feasible approach to regulate the bandgap and attain large specific surface area with more active sites. A fraction of S sites is substituted by P atoms to form InP bonds, the substitutional doping introduces a hybridized state near the valance band of In2S3 through the integration of P 3s, P 3p, and S 3p orbitals. By P doping, the electronic structure is tuned, the charge recombination is suppressed, and the surface reaction kinetics are improved, addressing all three major problems at once for water oxidation. With the synergistic effect of size and impurity states, more than fivefold enhancement is achieved in photocurrent, and high oxidation kinetics efficiency (79%). Therefore, the combination of size controlling synthesis of a 2D lamellar structure and doping strategies can be further developed in solar energy conversion devices.

中文翻译:

通过P掺杂和尺寸控制来调节2D In2S3的电子结构以实现高效的光电化学水氧化

二维(2D)层状材料具有强的光-质相互作用和可调谐的能带结构的优势,从而使太阳能转化为燃料的转换效率更高。本文证明了通过预播方法可控制地制备小尺寸P掺杂2D In 2 S 3阵列(P‐In 2 S 3),这是一种调节带隙并获得具有更多活性位点的大比表面积的可行方法。一部分S位被P原子取代形成InP键,取代掺杂在In 2 S 3的价带附近引入杂化态通过整合P 3s,P 3p和S 3p轨道。通过P掺杂,可调节电子结构,抑制电荷复合,并改善表面反应动力学,可同时解决水氧化的所有三个主要问题。借助尺寸和杂质态的协同效应,光电流提高了五倍以上,并且氧化动力学效率很高(79%)。因此,可以在太阳能转换装置中进一步开发二维层状结构的尺寸控制合成和掺杂策略的组合。
更新日期:2021-01-07
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