Abstract While Ga2O3 crystals are considered as the next generation optoelectronic materials, the exploration of HVPE α-Ga2O3 crystals and their use as solar-blind UV photodetector are still insufficient. In this paper, we investigated the structural characterization of HVPE α-Ga2O3 materials and their properties as solar-blind photodetector. HVPE α-Ga2O3 exhibited excellent structural properties with relatively good crystallinity, and smooth surface morphology, without any complicated process. Raman investigations confirmed the existence of slight compressive strain in the as-grown HVPE α-Ga2O3. UV–visible spectrophotometry proved that HVPE α-Ga2O3 had an optical bandgap of 5.15 eV, evidencing the suitability of this material for application as solar-blind photodetector. Furthermore, the photodetector synthesized using HVPE α-Ga2O3 showed excellent photo-response characteristics. We believe that this study will support further development of functional oxide semiconductor materials and opto-electronic devices.

中文翻译：

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HVPE α-Ga2O3 晶体的生长及其日盲紫外光电探测器应用

摘要 虽然Ga2O3晶体被认为是下一代光电材料，但对HVPEα-Ga2O3晶体及其作为日盲紫外光电探测器的探索仍然不足。在本文中，我们研究了 HVPE α-Ga2O3 材料的结构特征及其作为日盲光电探测器的性能。HVPE α-Ga2O3 表现出优异的结构特性，具有较好的结晶度和光滑的表面形态，无需任何复杂的工艺。拉曼研究证实了在生长的 HVPE α-Ga2O3 中存在轻微的压缩应变。紫外可见分光光度法证明 HVPE α-Ga2O3 的光学带隙为 5.15 eV，证明该材料适用于日盲光电探测器。此外，使用 HVPE α-Ga2O3 合成的光电探测器显示出优异的光响应特性。我们相信这项研究将支持功能性氧化物半导体材料和光电器件的进一步发展。