In this paper, we investigate the reduction of the Schottky barrier (SB) height at the metal and semiconducting single-walled carbon nanotube (SWNT) junction by the decoration of SWNTs using metal oxide nanoparticles (NPs). Interdigitated electrodes are fabricated (finger length 40 μm, width 3 μm, with space of 3 μm) on thermally grown silicon dioxide substrate. Thereafter, the SWNTs are aligned between the interdigitated electrodes. Following the decoration of SWNTs using metal oxide NPs, the devices are characterized. Decoration of SWNTs with metal oxide NPs reduces the SB height significantly. We find a reduction of SB height by 91 meV with titanium dioxide (TiO₂) NPs and 150 meV with zinc oxide (ZnO) NPs. As compared to the bare SWNTs, the conductance of the devices improves by ∼ 1.5X and ∼ 2.1X due to the decoration of the SWNTs using TiO₂ and ZnO NPs, respectively. This technique is of vital importance in decreasing the response time and enhancing the switching speed of the CNT-based sensors.

在本文中，我们研究了通过使用金属氧化物纳米粒子（NP）装饰SWNT来降低金属和半导体单壁碳纳米管（SWNT）结处的肖特基势垒（SB）高度的问题。在热生长的二氧化硅基板上制作叉指式电极（指形长度为40μm，宽度为3μm，间距为3μm）。此后，SWNT在叉指电极之间对准。在使用金属氧化物NP装饰单壁碳纳米管之后，对器件进行了表征。用金属氧化物NPs装饰SWNTs可以显着降低SB高度。我们发现二氧化钛（TiO ₂NPs和150 meV的氧化锌（ZnO）NPs。与裸露的SWNT相比，由于分别使用TiO ₂和ZnO NPs装饰SWNT，器件的电导率提高了约1.5倍和2.1倍。该技术对于减少响应时间和提高CNT基传感器的开关速度至关重要。