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Low-Temperature Photoluminescence Properties of the Monolayer MoS2 Nanomaterals
Integrated Ferroelectrics ( IF 0.7 ) Pub Date : 2020-11-11 , DOI: 10.1080/10584587.2020.1819043
Y. J. Zhai 1 , X. L. Chen 2 , J. H. Li 1 , X. Y. Chu 1 , Y. Zhang 1
Affiliation  

Abstract In this study, it is shown that with the increase of the number of layers of ultrathin MoS2 nanomaterials, the spacing of Raman shift increased and the photoluminescence intensity decreased. The monolayer MoS2 nanomaterials had the strongest photoluminescence intensity due to the rapid decrease of electron relaxation rate. With decreasing of temperature, the intensity emission enhanced and had a blue shift gradually. At the temperature of 79 K, the bound exciton luminescence peak was found, which was caused by the defect of the contact surface of the MoS2 and the SiO2/Si substrate or the impurities on the surface of the sample.

中文翻译:

单层二硫化钼纳米材料的低温光致发光特性

摘要 本研究表明,随着超薄MoS2纳米材料层数的增加,拉曼位移间距增大,光致发光强度降低。由于电子弛豫率的快速降低,单层MoS2纳米材料具有最强的光致发光强度。随着温度的降低,强度发射增强并逐渐出现蓝移。在79 K温度下发现束缚激子发光峰,这是由于MoS2与SiO2/Si衬底接触面缺陷或样品表面杂质所致。
更新日期:2020-11-11
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