Understanding the plastic behaviour of thin zirconium hydrides is important for its implications on crack nucleation in the Zirconium alloy cladding used in fission reactors. Microvoids originate at fractured hydrides, and their coalescence may lead to the failure of the component. In this work, an innovative discrete dislocation framework is presented together with the preliminary results. The aim is to develop a model that is significantly faster than existing 3D formulations, to make it possible to run a statistical analysis on a simulated microstructure. This comes with limitations, which are discussed together with the planned developments. The model combines two planar and orthogonal simulations. In one only edge, in the other only screw dislocations are allowed, thereby describing all sides of a dislocation loop approximated as a rectangle. The two families of dislocations interact via their elastic stress, and this coupling proved to be important and significantly enhanced the dislocation density. The proposed model enables us to implement a 3D stress analysis of the hydrides. The simulations show that the most critical scenario is when neighbouring slip planes become populated with opposite-signed dislocations. This was observed both in the edge and in the screw case, and was reflected in the principal stress calculated by combining the two. It was also observed that the degree of permeability of the interface to dislocation crossing is inversely correlated to the stress inside the hydride and to the dislocation source activation.

了解薄氢化锆的塑性行为对裂变反应堆中使用的锆合金熔覆层中裂纹成核的影响很重要。微孔起源于破裂的氢化物，它们的聚结可能导致部件失效。在这项工作中，提出了创新的离散位错框架以及初步结果。目的是开发一种比现有3D公式要快得多的模型，从而可以对模拟的微观结构进行统计分析。这带有局限性，将与计划的开发一起进行讨论。该模型结合了两个平面和正交模拟。在仅一个边缘中，仅在另一边缘中允许螺钉错位，从而描述了近似矩形的错位环的所有侧面。这两个位错家族通过它们的弹性应力相互作用，并且这种耦合被证明是重要的并且显着提高了位错密度。提出的模型使我们能够执行氢化物的3D应力分析。仿真表明，最关键的情况是相邻的滑动平面上出现相反符号的位错。这在边缘和螺钉情况下都可以观察到，并反映在通过将两者结合而计算出的主应力中。还观察到界面到位错交叉的渗透程度与氢化物内部的应力和位错源的活化成反比。并且这种耦合被证明是重要的，并且显着提高了位错密度。提出的模型使我们能够执行氢化物的3D应力分析。仿真表明，最关键的情况是相邻的滑动平面上出现相反符号的位错。这在边缘和螺钉情况下都可以观察到，并反映在通过将两者结合而计算出的主应力中。还观察到界面到位错交叉的渗透程度与氢化物内部的应力和位错源的活化成反比。并且这种耦合被证明是重要的，并且显着提高了位错密度。提出的模型使我们能够执行氢化物的3D应力分析。仿真表明，最关键的情况是相邻的滑动平面上出现相反符号的位错。这在边缘和螺钉情况下都可以观察到，并反映在通过将两者结合而计算出的主应力中。还观察到界面到位错交叉的渗透程度与氢化物内部的应力和位错源的活化成反比。仿真表明，最关键的情况是相邻的滑动平面上出现相反符号的位错。这在边缘和螺钉情况下都可以观察到，并反映在通过将两者结合而计算出的主应力中。还观察到界面到位错交叉的渗透程度与氢化物内部的应力和位错源的活化成反比。仿真表明，最关键的情况是相邻的滑动平面上出现相反符号的位错。这在边缘和螺钉情况下都可以观察到，并反映在通过将两者结合而计算出的主应力中。还观察到界面到位错交叉的渗透程度与氢化物内部的应力和位错源的活化成反比。