Converting mechanical energies to electricity using triboelectrification is one of the emerging technologies. Triboelectric nanogenerators (TENGs) have drawn much attention due to their high conversion efficiency. However, the internal capacitance of TENGs limits the currents generated and slows down the charging rate of storage elements. Such limitations restrict the amount of the generated power and the application of TENGs in areas that need high currents and power. This paper presents a solution to enhancing the output power of a TENG by devising an active on chip (IC) matching circuit. The matching circuit generates a negative capacitance to counter the effect of TENG’s internal capacitance and boosts the produced current. We implement the circuit using $130\mathrm{nm}$ CMOS technology and use a part of the generated power to provide the circuit with the needed biasing. The performance of the matching circuit is tested at different values of load capacitances. A relationship between the load and parasitic capacitances is estimated, which agrees with the simulation results. Numerical simulations show that the generated power can be greatly improved by using the matching circuit for four types of TENGs. The proposed matching circuit only consumes $6.4\mathrm{\mu }\mathrm{W}$ and improves the power of the TENG by 77.9% on average.

利用摩擦带电将机械能转化为电能是新兴技术之一。摩擦电纳米发电机（TENGs）由于其高转换效率而备受关注。但是，TENG的内部电容会限制产生的电流并减慢存储元件的充电速率。这样的限制限制了发电量以及TENG在需要高电流和高功率的区域中的应用。本文提出了一种通过设计有源片上（IC）匹配电路来提高TENG输出功率的解决方案。匹配电路产生一个负电容来抵消TENG内部电容的影响并增加产生的电流。我们使用$130\mathrm{纳米}$CMOS技术并使用一部分产生的功率为电路提供所需的偏置。在不同的负载电容值下测试匹配电路的性能。估算了负载与寄生电容之间的关系，这与仿真结果相符。数值仿真表明，通过对四种类型的TENG使用匹配电路，可以大大提高发电功率。建议的匹配电路仅消耗$6。4\mathrm{\mu }\mathrm{w\; ^}$ 并将TENG的功率平均提高了77.9％。