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Influence of Inlet Structures of Planetary Reactor on Gas Reaction Path in AlN-MOVPE Process
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2021-01-01 , DOI: 10.1016/j.jcrysgro.2020.125942
Yanlin Mao , Ran Zuo , Yulong Fang , Jiayun Yin , Yanmin Guo , Zhihong Feng

Abstract Numerical study on the influence of inlet structure of planetary reactor on gas reaction path and growth rate in AlN-MOVPE was investigated. It was found that, for the conventional two-inlet reactor (base reactor), the reaction is dominated by the adduct reaction path, and the growth rate is low but evenly distributed; for the inverted inlet reactor, i.e., group-III in lower inlet and group-V in upper inlet, the reaction is dominated by the pyrolysis path, and the growth rate is higher than the base reactor but the growth uniformity is decreased. By moving the position of the inlet separator closer to the ceiling for the inverted inlet, the growth uniformity is improved. When the number of reactor inlets increases from two inlets (base reactor) to three and five inlets, the growth rate increases, the growth uniformity improves, and the reaction changes from the adduct-dominated path to the pyrolysis and adduct coexisted path. Besides varying the inlet geometry, we also found that decreasing the NH3 flow rate will enhance the pyrolysis path and the growth rate for the above reactors.

中文翻译:

行星反应器入口结构对AlN-MOVPE工艺气体反应路径的影响

摘要 研究了行星反应器入口结构对AlN-MOVPE气体反应路径和生长速率影响的数值研究。研究发现,对于传统的双入口反应器(基础反应器),反应以加合物反应路径为主,生长速率低但分布均匀;对于倒置入口反应器,即下入口为III族,上入口为V族,反应以热解路径为主,生长速率高于基础反应器,但生长均匀性降低。通过将入口分离器的位置移近倒置入口的天花板,提高了生长均匀性。当反应器入口数量从两个入口(基础反应器)增加到三个和五个入口时,生长速度增加,生长均匀度提高,反应由加合物主导路径转变为热解与加合物共存路径。除了改变入口几何形状外,我们还发现降低 NH3 流速将增强上述反应器的热解路径和生长速率。
更新日期:2021-01-01
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