We proposed that two-dimensional tetragonal structures XOBr (X = Tc, Ru) are multiferroic semiconductor and exhibit strong electrical anisotropy. Ferromagnetic property and ferroelasticity coexist in XOBr films. The direction-control of anisotropic electron behaviors can be achieved with ferroelastic switch by external stress. Ferroelasticity in Tc(Ru)OBr has switching barrier of 77(136) meV/atom, which provides possibility to achieve anisotropic switching in experiments. The difference of electron mobility in x and y-directions indicates that carriers’ migration is directional. A 90° reversible ferroelastic switch can control direction of carriers’ migration. The findings provide strong evidence for design of controllable electronic and memory devices.

我们提出二维四方结构XOBr（X = Tc，Ru）是多铁性半导体，并且表现出很强的电各向异性。XOBr膜中同时存在铁磁性能和铁弹性。各向异性电子行为的方向控制可以通过外部应力通过铁弹性开关实现。Tc（Ru）OBr中的铁弹性具有77（136）meV /原子的转换势垒，这为在实验中实现各向异性转换提供了可能性。x和y方向电子迁移率的差异表明载流子的迁移是有方向性的。90°可逆铁弹性开关可以控制载流子迁移的方向。这些发现为可控电子和存储设备的设计提供了有力的证据。