Ge–Se–Te chalcogenide films with Ge content from 10% to 27% were prepared using thermal evaporation. The films were annealed with different times, and the changes of the linear refractive index and optical band gap of the films with different chemical compositions were investigated. It was found that, after 30 h of annealing, the Ge₂₀Se_8.5Te_71.5 film exhibits the smallest change ratio in terms of linear refractive index (<0.5%), optical band gap (<1.5%), and thickness (<2.5%). Therefore, this component has the best optical stability in the Ge–Se–Te system studied in this paper. The optical band gap of Ge₂₀Se_8.5Te_71.5 is about 0.8 eV, and the refractive index exceeds 3.4, which is beneficial to the applications in Te-based optical waveguide devices.

使用热蒸发法制备了锗含量从10％到27％的Ge-Se-Te硫族化物薄膜。对薄膜进行不同的退火时间，研究了不同化学组成的薄膜的线性折射率和光学带隙的变化。发现在退火30小时后，Ge ₂₀ Se _8.5 Te _71.5膜在线性折射率（<0.5％），光学带隙（<1.5％）和厚度（<2.5 ％）。因此，该成分在本文研究的Ge-Se-Te系统中具有最佳的光学稳定性。Ge ₂₀ Se _8.5 Te _71.5的光学带隙 λ约为0.8eV，并且折射率超过3.4，这有利于在基于Te的光波导器件中的应用。