Heterogeneous integration of IC chiplets into systems on a chip (SoC) is further revolutionizing the semiconductor industry. This letter introduces a metal embedded chiplet assembly for microwave integrated circuit (MECAMIC) technology that uses high-scaled GaN HEMT chiplets. MECAMIC relies on the cointegration of transistor chiplets with passive interposers using an embedding backside metal process. We report the development of standardized 40-nm AlGaN/GaN HEMT chiplets to rapidly prototype GaN circuits up to $W$ -band by combining advances in $e$ -beam gate processes and massively parallel singulation techniques. GaN chiplets with $f_{\mathrm {T}} > 110$ GHz and $I_{\mathrm {max}} > 1.3$ A/mm were fabricated in yielded quantities exceeding 50000 per $4\prime\prime$ wafer. Simulation and experimental results of single-stage MECAMIC circuits with $4\,\,\mu \text{m}\,\,\times 37.5\,\,\mu \text{m}$ device chiplets demonstrated 6.8-dB gain at 77 GHz. The MECAMIC technology not only optimizes the GaN wafer utilization but also provides the ability to incorporate other technologies, offering unique design flexibility at millimeter wave.

中文翻译：

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使用高度缩放的现成 GaN HEMT 小芯片的异构集成射频电路

将 IC 小芯片异构集成到片上系统 (SoC) 中正在进一步革新半导体行业。这封信介绍了一种用于微波集成电路 (MECAMIC) 技术的金属嵌入式小芯片组件，该技术使用大规模 GaN HEMT 小芯片。MECAMIC 依赖于使用嵌入背面金属工艺的晶体管小芯片与无源中介层的协集成。我们报告了标准化 40 纳米 AlGaN/GaN HEMT 小芯片的开发，以快速制作 GaN 电路原型 $W$ -band 通过结合进步 $e$ - 束门工艺和大规模并行分离技术。GaN 小芯片 $f_{\mathrm {T}} > 110$ GHz 和 $I_{\mathrm {max}} > 1.3$ A/mm 的产量超过 50000 $4\prime\prime$ 晶圆。单级 MECAMIC 电路的仿真和实验结果 $4\,\,\mu \text{m}\,\,\times 37.5\,\,\mu \text{m}$ 设备小芯片在 77 GHz 时表现出 6.8-dB 增益。MECAMIC 技术不仅优化了 GaN 晶圆的利用率，而且还提供了整合其他技术的能力，在毫米波方面提供了独特的设计灵活性。