This letter presents a 17.5–22.5-GHz low-noise amplifier (LNA) with the high out-of-band rejection in the range of 27.5–32.5 GHz and 4–10 GHz by using 90-nm GaAs p-HEMT technology. The multizero control method is proposed to produce multiple zeros for generating the high out-of-band rejection and expanding the rejection bandwidth. The multizero control is realized by bypass capacitor notch filters at the drain of transistors and shunt capacitor notch filters at the interstage matching circuits. By using this approach, the high rejection can be achieved at unwanted frequencies without additional devices. Also, the multizero control is mainly implemented in the transistor’s bypass branch, which can achieve the low noise figure (NF) well within the whole operating band. The cost and integration of the front end can also be improved. The measured maximum gain is 23.9 dB at 19 GHz, and the 3-dB bandwidth is 17.5–22.5 GHz. The good interference rejection of the proposed LNA is from 57 to 73 dB and 61 to 72 dB in the range of 4–10 GHz and 27.5–32.5 GHz, respectively. The measured NF is 1.1–1.3 dB. The LNA area is 2 mm $\times1.3$ mm including pads.

中文翻译：

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一种采用多零控制方法的卫星通信K波段高抗干扰砷化镓低噪声放大器

这封信展示了一种 17.5-22.5-GHz 低噪声放大器 (LNA)，通过使用 90-nm GaAs p-HEMT 技术在 27.5-32.5 GHz 和 4-10 GHz 范围内具有高带外抑制。提出了多零控制方法来产生多个零以产生高带外抑制并扩展抑制带宽。多零控制是通过晶体管漏极的旁路电容陷波滤波器和级间匹配电路的并联电容陷波滤波器实现的。通过使用这种方法，无需额外设备即可在不需要的频率上实现高抑制。此外，多零控制主要在晶体管的旁路支路中实现，可以在整个工作频段内实现良好的低噪声系数（NF）。还可以提高前端的成本和集成度。在 19 GHz 时测得的最大增益为 23.9 dB，3-dB 带宽为 17.5–22.5 GHz。在 4-10 GHz 和 27.5-32.5 GHz 范围内，所提议的 LNA 的良好干扰抑制分别为 57 至 73 dB 和 61 至 72 dB。测得的 NF 为 1.1–1.3 dB。LNA 面积为 2 mm $\times1.3$ mm，包括焊盘。