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A 24-GHz Single-Transistor Oscillator on Paper
IEEE Microwave and Wireless Components Letters ( IF 3 ) Pub Date : 2020-11-01 , DOI: 10.1109/lmwc.2020.3024811
Valentina Palazzi , Federico Alimenti , Domenico Zito , Paolo Mezzanotte , Luca Roselli

This letter describes a single-transistor oscillator implemented on a paper substrate at the operating frequency of 24 GHz, based on a design procedure that makes it possible to overcome the limitations caused by thin high-loss substrates and package parasitics of commercial components. The commercial transistor adopted in the oscillator is led to instability by exploiting its parasitic gate inductance. The drain network compensates for the parasitic inductance of the transistor package and connects the oscillator circuit to a 50- $\Omega $ load resistance. Finally, an external inductor at the source terminal is used to resonate out the capacitive contribution of the circuit at the oscillation frequency. Overall, the active device appears in a quasi-common-drain stage. Experimental results on prototype show that the oscillator exhibits an output power of +6.2 dBm at 24 GHz, with a dc power consumption of 72.5 mW.

中文翻译:

纸上的 24GHz 单晶体管振荡器

这封信描述了一种在纸基板上实现的单晶体管振荡器,工作频率为 24 GHz,基于一种设计程序,可以克服薄高损耗基板和商用组件封装寄生效应造成的限制。振荡器中采用的商用晶体管利用其寄生栅极电感导致不稳定。漏极网络补偿晶体管封装的寄生电感并将振荡器电路连接到 50-$\Omega$ 负载电阻。最后,源极端子的外部电感器用于谐振电路在振荡频率下的电容贡献。总体而言,有源器件处于准公共漏极阶段。
更新日期:2020-11-01
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