We report the growth of the intrinsic magnetic topological system $\mathrm{MnTe}{\left({\mathrm{Bi}}_2{\mathrm{Te}}_3\right)}_n$ by molecular beam epitaxy. By mapping the temperature and the Bi:Mn flux ratio, it is shown that there is a narrow growth window for the $n=1$ phase $\mathrm{Mn}{\mathrm{Bi}}_2{\mathrm{Te}}_4$ with $2.0<\mathrm{Bi}:\mathrm{Mn}<2.6$ at 225 °C. Here the films are stoichiometric and excess Bi and Te is not incorporated. At higher flux ratios (Bi:Mn≥4.5) it is found that the $n=2\mathrm{Mn}{\mathrm{Bi}}_4{\mathrm{Te}}_7$ phase is stabilized. Transport measurements indicate that the $\mathrm{Mn}{\mathrm{Bi}}_2{\mathrm{Te}}_4$ and $\mathrm{Mn}{\mathrm{Bi}}_4{\mathrm{Te}}_7$ undergo magnetic transitions around 25 and 10 K, respectively, consistent with antiferromagnetic phases found in the bulk. Further, for Mn-rich conditions (Bi:Mn<2), ferromagnetism emerges that exhibits a clear hysteretic state in the Hall effect, which likely indicates Mn-doped $\mathrm{Mn}{\mathrm{Bi}}_2{\mathrm{Te}}_4$. Understanding how to grow ternary chalcogenide phases is the key to synthesizing new materials and to interface magnetism and topology, which together are routes to realize and control exotic quantum phenomena.

中文翻译：

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分子束外延对MnTe（Bi2Te3）n的吸附控制生长，表现出化学计量控制的磁性

我们报告了本征磁拓扑系统的增长 $\mathrm{锰铁}{（{双}_2{特}_3）}_{ñ}$通过分子束外延。通过绘制温度和Bi：Mn的通量比，可以看出存在一个狭窄的生长窗口。$ñ=\mathrm{1个}$ 相 $锰{双}_2{特}_4$ 与 $2.0<双：锰<2.6$在225°C下。在这里，这些膜是化学计量的，并且不掺入过量的Bi和Te。发现在较高的通量比（Bi：Mn≥4.5）下，$ñ=2锰{双}_4{特}_7$相稳定。运输测量表明$锰{双}_2{特}_4$ 和 $锰{双}_4{特}_7$经历大约25 K和10 K的磁跃迁，这与在主体中发现的反铁磁相一致。此外，对于富锰条件（Bi：Mn <2），会出现铁磁性，并在霍尔效应中表现出明显的磁滞状态，这可能表明锰掺杂$锰{双}_2{特}_4$。理解如何生长三元硫属化物相是合成新材料以及界面磁性和拓扑的关键，它们共同是实现和控制外来量子现象的途径。