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Domain fluctuations in a ferroelectric low-strainBaTiO3thin film
Physical Review Materials ( IF 3.4 ) Pub Date : 2020-11-11 , DOI: 10.1103/physrevmaterials.4.114409
Jianheng Li , Louie Zhong , Rahul Jangid , Meera , Geoffery Rippy , Kenneth Ainslie , Chris Kohne , Arnoud S. Everhardt , Beatriz Noheda , Yugang Zhang , Andrei Fluerasu , Sylvia Matzen , Roopali Kukreja

A ferroelectric BaTiO3 thin film grown on a NdScO3 substrate was studied using x-ray photon correlation spectroscopy (XPCS) to characterize thermal fluctuations near the a/b to a/c domain structure transformation present in this low-strain material, which is absent in the bulk. XPCS studies provide a direct comparison of the role of domain fluctuations in first- and second-order phase transformations. The a/b to a/c domain transformation is accompanied by a decrease in fluctuation timescales, and an increase in intensity and correlation length. Surprisingly, domain fluctuations are observed up to 25 °C above the transformation, concomitant with the growth of a/c domains and coexistence of both domain types. After a small window of stability, as the Curie temperature is approached, a/c domain fluctuations are observed, albeit slower, potentially due to the structural transformation associated with the ferroelectric to paraelectric transformation. The observed time evolution and reconfiguration of domain patterns highlight the role played by phase coexistence and elastic boundary conditions in altering fluctuation timescales in ferroelectric thin films.

中文翻译:

铁电低应变BaTiO3薄膜的畴涨落

铁电体 钛酸钡3 薄膜生长在 钕铁硼3 使用X射线光子相关光谱(XPCS)研究了衬底,以表征衬底附近的热涨落。 一种/b一种/C这种低应变材料中存在大量的畴结构转变,而主体中不存在这种转变。XPCS研究提供了域波动在一阶和二阶相变中的作用的直接比较。的一种/b一种/C域变换伴随着波动时间尺度的减少,以及强度和相关长度的增加。出人意料的是,在转变温度以上25°C时观察到了域波动,并伴随着一种/C域和两种域类型的共存。经过一小段稳定时间后,随着居里温度的升高,一种/C观察到磁畴波动,尽管较慢,可能是由于与铁电至顺电转变有关的结构转变。观察到的时间演化和畴图案的重新配置突出了相位共存和弹性边界条件在改变铁电薄膜的波动时标中所起的作用。
更新日期:2020-11-12
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