当前位置: X-MOL 学术Phys. Rev. Materials › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Nature of native atomic defects inZrTe5and their impact on the low-energy electronic structure
Physical Review Materials ( IF 3.4 ) Pub Date : 2020-11-10 , DOI: 10.1103/physrevmaterials.4.114201
B. Salzmann , A. Pulkkinen , B. Hildebrand , T. Jaouen , S. N. Zhang , E. Martino , Q. Li , G. Gu , H. Berger , O. V. Yazyev , A. Akrap , C. Monney

Over the past decades, investigations of the anomalous low-energy electronic properties of ZrTe5 have reached a wide array of conclusions. An open question is the growth method's impact on the stoichiometry of ZrTe5 samples, especially given the very small density of states near its chemical potential. Here we report on high-resolution scanning tunneling microscopy and spectroscopy measurements performed on samples grown via different methods. Using density functional theory calculations, we identify the most prevalent types of atomic defects on the surface of ZrTe5, namely, Te vacancies and intercalated Zr atoms. Finally, we precisely quantify their density and outline their role as ionized defects in the anomalous resistivity of this material.

中文翻译:

ZrTe5中天然原子缺陷的性质及其对低能电子结构的影响

在过去的几十年中,对低能电子的异常电子特性进行了研究。 5已经得出了各种各样的结论。一个悬而未决的问题是生长方法对化学计量的影响。5样品,特别是考虑到接近其化学势的非常小的状态密度。在这里,我们报告了对通过不同方法生长的样品进行的高分辨率扫描隧道显微镜和光谱学测量结果。使用密度泛函理论计算,我们确定了原子表面上最普遍的原子缺陷类型5即Te空位和插入的Zr原子。最后,我们精确地量化了它们的密度,并概述了它们在这种材料的反常电阻率中作为电离缺陷的作用。
更新日期:2020-11-12
down
wechat
bug