A p‐type crystalline silicon (c‐Si) passivated emitter and rear contact (PERC) nowadays have become mainstream in the highly competitive photovoltaic market. Herein, the recently popular passivating contact concept on the front textured surface of p‐type c‐Si PERC solar cells is applied. The full‐area textured passivating contact consists of an ultrathin SiO₂ film of ≈1.5 nm thickness grown with thermal oxidation and phosphorus‐doped polysilicon (poly‐Si) contact layer by low‐pressure chemical vapor deposition. A detailed investigation of poly‐Si with different crystalline structures, doping conditions, and thicknesses on the passivation effect and parasitic absorption loss is carried out. Preliminary achievement of 21.3% efficiency is realized in large‐area (244.3 cm²) p‐PERC c‐Si solar cells without the need for additional laser selective redoping. Theoretical calculation expects that the cell efficiency can be enhanced to 23.4% by decreasing the recombination current to a reasonable level. It is demonstrated that further improvement of low‐cost p‐PERC c‐Si solar cells is feasible using the full‐area textured passivating contact processes which are fully compatible with existing production lines.

中文翻译：

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磷掺杂的多晶硅全面积钝化接触层在p型硅的前表面上的应用

甲p型结晶硅（c-Si）的钝化发射极和后接触（PERC）现今已成为在竞争激烈的光伏市场的主流。在这里，在p型c-Si PERC太阳能电池的正面纹理表面上应用了最近流行的钝化接触概念。全区域纹理钝化触点由超薄SiO _2组成通过低压化学气相沉积，热氧化和磷掺杂的多晶硅（poly-Si）接触层生长的厚度约为1.5 nm的薄膜。对具有不同晶体结构，掺杂条件和厚度的钝化效应和寄生吸收损耗的多晶硅进行了详细研究。大面积（244.3 cm ²）p ‐PERC c-Si太阳能电池可实现21.3％的效率，而无需进行额外的激光选择性重做。理论计算期望通过将重组电流降低至合理水平可以将电池效率提高至23.4％。证明了低成本p的进一步改善‐PERC c-Si太阳能电池可使用与现有生产线完全兼容的全面积纹理钝化接触工艺来实现。