Abstract

Si nanophases and nanolayers were obtained by bombardment with Ar⁺ ions followed by annealing at various depths of silicon oxide. As ion energy E₀ varies from 10 to 25 keV, the average depth of Si nanophase formation varies from 15 to 25 nm. It is shown that, as the sizes of Si nanophases vary from ~10 to 25 nm, band gap E_g decreases from 1.9 to 1.5 eV. For Si nanolayers, E_g is ~1.1–1.2 eV.

中文翻译：

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在SiO 2近表面区域的不同深度形成的Si纳米相的晶体结构和带隙

摘要

通过用Ar ⁺离子轰击，然后在各种深度的氧化硅中退火，获得了Si纳米相和纳米层。随着离子能量E ₀从10到25 keV变化，Si纳米相形成的平均深度从15到25 nm变化。结果表明，随着Si纳米相尺寸的变化范围从〜10到25 nm，带隙E _g从1.9降低到1.5 eV。对于Si纳米层，E _g为〜1.1–1.2 eV。