The reduction in the density of SiO₂/Si interface state (D _it) in the isolation region and transfer transistor gate oxide is necessary to improve the performance of complementary metal-oxide semiconductor (CMOS) image sensors. In this study, we demonstrated that a hydrocarbon-molecular-ion-implanted epitaxial silicon wafer can reduce the D _it and Pb₀ center density in SiO₂/Si interface regions analyzed by quasi-static capacitance–voltage and electron spin resonance measurements, respectively. The D _it and Pb₀ center density of wafers without hydrocarbon molecular ions increased after annealing at 700 C. On the other hand, the D _it and Pb₀ center density of wafers implanted with hydrocarbon molecular ions decreased after annealing at 700 C. We also estimated the activation energy to be 1.67eV for the hydrogen termination reactions with hydrogen molecules and Si dangling bonds at the SiO₂/Si interface. The termination effects of the hydrocarbon-molecular-ion-implanted epitaxial silicon wafers can contribute to the high electrical performance of CMOS image sensors.

为了提高互补金属氧化物半导体（CMOS）图像传感器的性能，必须降低隔离区和传输晶体管栅氧化层中SiO ₂ / Si界面态（D _it）的密度。在这项研究中，我们证明了通过准静态电容-电压和电子自旋共振测量分析，烃分子离子注入的外延硅晶片可以降低SiO ₂ / Si界面区域的D _it和Pb ₀中心密度。。的d_它和Pb ₀ 在700°C退火后，没有烃分子离子的晶片的中心密度增加。另一方面，在700°C退火后，注入烃分子离子的晶片的D _it和Pb ₀中心密度降低。我们还估计了活化能为1.67eV用于在SiO ₂ / Si界面处与氢分子和Si悬挂键的氢终止反应。注入了烃分子离子的外延硅晶片的终止效应可有助于CMOS图像传感器的高电性能。