The subthreshold current–voltage (subthreshold slope) characteristic of a fully depleted silicon‐on‐insulator high‐k dielectric‐metal gate field‐effect transistor is applied for evaluation of the interface traps located at both the front and back channels. The proposed characterization method allows an estimation of averaged trap densities separately for the front and back interfaces of the channel. Performing subthreshold slope measurements at several temperatures allows the extraction of the energy distributions of the interface trap densities for both interfaces and obtaining essential characteristics of the stack.

中文翻译：

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使用亚阈值斜率方法表征超薄全耗尽型绝缘体上硅器件

完全耗尽绝缘体上硅高k介电金属栅极场效应晶体管的亚阈值电流-电压（亚阈值斜率）特性可用于评估位于前通道和后通道的接口陷阱。所提出的表征方法允许分别估计通道的正面和背面的平均陷阱密度。在几个温度下执行亚阈值斜率测量，可以提取两个界面的界面陷阱密度的能量分布，并获得堆栈的基本特性。