Abstract The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias conditions. Switching tests were performed before and after irradiation steps. The devices were characterized at temperatures ranging from −50 °C to +75 °C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments, because the tested devices have presented an expressive recovery of its parameters of Vth, gmmax and switching times, after accumulation of 350 krad of TID.

中文翻译：

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用于恶劣环境的 GaN HEMT 的电离辐射硬度测试

摘要 基于 GaN 的 COTS 功率晶体管暴露于 10 keV X 射线的 TID 效应。这些 HEMT 在开和关状态偏置条件下进行了测试。在辐照步骤之前和之后进行切换测试。这些器件在 -50 °C 至 +75 °C 的温度范围内进行了表征。结果表明，GaN 技术是在恶劣环境中使用的绝佳候选技术，因为经过测试的器件在累积 350 krad TID 后表现出其 Vth、gmmax 和开关时间参数的显着恢复。