Abstract In this paper, the degradation mechanism of RF performance of 130 nm T-gate partially depleted (PD) silicon-on-insulator input-output nMOSFETs at different total ionizing dose levels has been investigated. RF figures of merit (the cut-off frequency fT, maximum oscillation frequency fmax) show significant degradation, about 26% and 80% respectively. The variation of the small signal parameters (output conductance (gds), transconductance (gm), gate resistance (Rg) and capacitance (Cgg)) at different TID levels has been discussed. TID-induced trapped charges at gate oxide and STI corner increase the vertical electric field, which leads to the broadening of depletion layer and the narrowing of neutral body region. Furthermore, the small signal parameters appear more complex degradation in the wide frequency range. A model which considers the body and substrate parasitic effects is presented, and the results of ADS simulation based on this model are consistent with the experimental results.

中文翻译：

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总电离剂量对 130 nm PD SOI I/O nMOSFET 射频性能的影响

摘要 本文研究了在不同总电离剂量水平下 130 nm T 栅极部分耗尽 (PD) 绝缘体上硅输入-输出 nMOSFET 的射频性能退化机制。RF 品质因数（截止频率 fT，最大振荡频率 fmax）显示显着退化，分别约为 26% 和 80%。已经讨论了不同 TID 水平下小信号参数（输出电导 (gds)、跨导 (gm)、栅极电阻 (Rg) 和电容 (Cgg)）的变化。TID 引起的栅氧化层和 STI 角处的俘获电荷增加了垂直电场，导致耗尽层加宽和中性体区变窄。此外，小信号参数在较宽的频率范围内出现更复杂的退化。