The diffusivity and interaction of As and In atoms co-implanted in thermally-grown SiO₂ films were investigated. It was established that atom profiles and the nanocrystal growth are strongly dependent on the SiO₂ surface conditions determining the external oxygen flow into a silicon dioxide film. The reciprocal influence of In and As atoms on their diffusion was obtained, too. In the case of native SiO₂ films, the formation of stoichiometric InAs nanocrystals was realized at the depth of In⁺ ion projective range as the arsenic atom diffusion was activated. In the case of SiO₂ films encapsulated with Si₃N₄ before the annealing, a strong diffusion of In atoms to the depth of As⁺ ion projective range took place. At that, the formation of amorphous InAs nanoparticles was observed. The microscopic mechanisms of In and As diffusion and the nanocrystal growth are considered within the atom position in the SiO₂ network.

研究了共注入热生长SiO ₂薄膜中As和In原子的扩散性和相互作用。已经确定，原子分布和纳米晶体的生长在很大程度上取决于确定外部氧气流入二氧化硅膜的SiO ₂表面条件。还获得了In和As原子对其扩散的相互影响。在天然SiO ₂薄膜的情况下，随着砷原子扩散的激活，在In ⁺离子投射范围的深度实现了化学计量的InAs纳米晶体的形成。如果是用Si封装的SiO ₂薄膜在退火之前的₃ N _4处，In原子强烈扩散到As ⁺离子投射范围的深度。那时，观察到非晶InAs纳米颗粒的形成。In和As扩散以及纳米晶体生长的微观机理被认为是在SiO ₂网络的原子位置之内。