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Annealing induced surface restructuring in hydrothermally synthesized gallium oxide nano-cuboids
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2021-01-01 , DOI: 10.1016/j.jcrysgro.2020.125946
Siddhartha Suman , Nagaraju Mukurala , Ajay K. Kushwaha

Abstract Gallium Oxide (Ga2O3) nanostructures are synthesized using a hydrothermal approach and the effect of different gallium precursors on the morphology of gallium nanostructures is studied. The rice-like nanostructures are obtained in gallium chloride and gallium nitrate precursors, whereas nano-cuboids are formed in the case of gallium acetylacetonate. The size of the edge defined nano-cuboid is in the range of 0.6μm × 0.3μm × 0.2μm. The as-synthesized nano-cuboids are in the metastable phase “α” and converts to a stable “β” phase after annealed at a higher temperature (∼ 850°C). Post synthesis thermal annealing also results in the creation of nanopores on the surface of these nano-cuboids. Pores size increases with an increase in annealing temperature till 950°C, further increase in annealing temperature reduces the size of pores and a smoother surface appeared. The annealing induced surface restructuring offers significant alteration on nano-cuboid properties that could be beneficial for surface-related applications.

中文翻译:

水热合成氧化镓纳米长方体的退火诱导表面重构

摘要 采用水热法合成了氧化镓 (Ga2O3) 纳米结构,并研究了不同镓前驱体对镓纳米结构形貌的影响。在氯化镓和硝酸镓前体中获得米状纳米结构,而在乙酰丙酮镓的情况下形成纳米长方体。边缘定义的纳米长方体的尺寸在0.6μm×0.3μm×0.2μm的范围内。合成的纳米长方体处于亚稳态“α”相,并在较高温度(~850°C)下退火后转化为稳定的“β”相。合成后热退火还会导致在这些纳米长方体表面产生纳米孔。孔径随着退火温度的增加而增加,直到 950°C,进一步提高退火温度会减小孔的尺寸并出现更光滑的表面。退火诱导的表面重组对纳米长方体特性提供了显着改变,这可能有利于表面相关应用。
更新日期:2021-01-01
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