The commercialization of lithium niobate on insulator (LNOI) wafer has resulted in significant on-chip photonic integration application owing to its remarkable photonic, acousto-optic, electro-optic, and piezoelectric nature. In recent years, a variety of high-performance on-chip LNOI-based photonic devices have been realized. In this study, we developed a 1-mol% erbium-doped lithium niobate crystal and its LNOI on a silicon substrate and fabricated an erbium-doped LNOI microdisk with high quality factor (∼ 1.05×10⁵). C-band laser emission at ∼1530 and ∼1560 nm (linewidth 0.12 nm) from the high-Q erbium-doped LNOI microdisk was demonstrated with 974- and 1460-nm pumping, with the latter having better thermal stability. This microlaser would play an important role in the photonic integrated circuits of the lithium niobate platform.

绝缘子上铌酸锂（LNOI）晶片的商业化由于其非凡的光子，声光，电光和压电特性，已在芯片上实现了光子集成应用。近年来，已经实现了多种基于LNOI的高性能片上光子器件。在这项研究中，我们在硅基板上开发了1摩尔％的掺铌铌酸锂晶体及其LNOI，并制造了高质量因子（〜1.05×10 ⁵）的掺LNOI微盘。C波段激光从高Q发射到约1530 nm和约1560 nm（线宽0.12 nm）掺and LNOI微型磁盘在974和1460 nm抽运条件下得到了证明，后者具有更好的热稳定性。该微激光器将在铌酸锂平台的光子集成电路中发挥重要作用。