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Quasi-Normally-Off AlGaN/GaN HEMTs with SiNx Stress Liner and Comb Gate for Power Electronics Applications
IEEE Journal of the Electron Devices Society ( IF 2.3 ) Pub Date : 2020-01-01 , DOI: 10.1109/jeds.2020.3020186 Wei-Chih Cheng , Fanming Zeng , Minghao He , Qing Wang , Mansun Chan , Hongyu Yu
IEEE Journal of the Electron Devices Society ( IF 2.3 ) Pub Date : 2020-01-01 , DOI: 10.1109/jeds.2020.3020186 Wei-Chih Cheng , Fanming Zeng , Minghao He , Qing Wang , Mansun Chan , Hongyu Yu
Recess processes for the fabrication of normally-off GaN HEMTs generally compromise devices’ on-state performance. In this work, recess-free quasi-normally-off GaN HEMTs with a threshold voltage of 0.24 V is realized by local control of two-dimensional electron gas (2DEG) density. The devices feature a $0.1~{\mu }\text{m}$ gate length, SiNx stress liner, and comb gate. SiNx liner can provide significant stress to AlGaN/GaN heterostructure in the scaled gate region. The additional stress translates to the additional electric field and depletes the 2DEG in the gate region. As a result, the quasi-normally-off operation is achieved. Furthermore, the comb gate structure is introduced to suppress the short channel effects, supported by TCAD simulation. The quasi-normally-off devices’ excellent on-state performances are benchmarked against the normally-off devices reported recently and a p-GaN HEMT purchased from a commercial foundry. The results support strain engineering as a promising technique to pursue the normally-off operation of GaN HEMTs.
中文翻译:
用于电力电子应用的具有 SiNx 应力衬垫和梳状栅极的准常断 AlGaN/GaN HEMT
常关 GaN HEMT 的制造工艺通常会损害器件的导通性能。在这项工作中,通过二维电子气(2DEG)密度的局部控制,实现了阈值为 0.24 V 的无凹槽准常关 GaN HEMT。这些器件具有 $0.1~{\mu}\text{m}$ 栅极长度、SiNx 应力衬垫和梳状栅极。SiNx 衬垫可以为缩放栅极区域中的 AlGaN/GaN 异质结构提供显着的应力。附加应力转化为附加电场并耗尽栅极区域中的 2DEG。结果,实现了准常断操作。此外,在 TCAD 模拟的支持下,引入了梳状栅极结构以抑制短沟道效应。准常关器件出色的导通性能以最近报道的常关器件和从商业代工厂购买的 p-GaN HEMT 为基准。结果支持应变工程作为一种有前途的技术来追求 GaN HEMT 的常关操作。
更新日期:2020-01-01
中文翻译:
用于电力电子应用的具有 SiNx 应力衬垫和梳状栅极的准常断 AlGaN/GaN HEMT
常关 GaN HEMT 的制造工艺通常会损害器件的导通性能。在这项工作中,通过二维电子气(2DEG)密度的局部控制,实现了阈值为 0.24 V 的无凹槽准常关 GaN HEMT。这些器件具有 $0.1~{\mu}\text{m}$ 栅极长度、SiNx 应力衬垫和梳状栅极。SiNx 衬垫可以为缩放栅极区域中的 AlGaN/GaN 异质结构提供显着的应力。附加应力转化为附加电场并耗尽栅极区域中的 2DEG。结果,实现了准常断操作。此外,在 TCAD 模拟的支持下,引入了梳状栅极结构以抑制短沟道效应。准常关器件出色的导通性能以最近报道的常关器件和从商业代工厂购买的 p-GaN HEMT 为基准。结果支持应变工程作为一种有前途的技术来追求 GaN HEMT 的常关操作。